Samsung began shipping HBM4E memory, a new variant of HBM4, with samples promised earlier and now delivered. The 12-layer configuration provides 48GB capacity, up from 36GB in HBM4, and Samsung also develops 32GB (8-layer) and 64GB (16-layer) options. HBM4E delivers about 20% higher performance, raising per-pin speed to 14Gbps and reaching 3.6TB/s per stack. The technology combines 10nm-class “1c” memory dies with a 4nm logic base die. Samsung reworked the design to improve energy efficiency by 16% and reduce thermal resistance by at least 14%, enabling easier cooling. Future bandwidth improvements could raise 14Gbps to 16Gbps.
"Samsung started shipping HBM4 memory to its customers with a promise to send them samples of the improved HBM4E later this year - well, "later this year" is now. As the title says, the new variant has more capacity with the same 12-layer design, it offers higher bandwidth and runs cooler."
"Samsung HBM4E design currently has a 12-layer configuration, which works out to 48GB capacity. This is up from 36GB with HBM4. Samsung is also developing 32GB (8-layer) and 64GB (16-layer) variants to give its customers more options when building their designs."
"In addition to the 33% increase in capacity, HBM4E is around 20% faster - per-pin speed is now 14Gbps for a total of 3.6 terabytes per second per stack. For comparison, HBM4 does 11.7Gbps per pin and 3.6 terabytes per second per stack."
"The HBM4E technology is a combination of 6th generation "1c" (10nm class) for the memory dies and a 4nm logic base die. Samsung reworked the design to improve energy efficiency by 16% - this means memory uses less power and generates less heat. But it's even better - the new design reduces thermal resistance by at least 14%, so the memory is easier to cool too."
Read at GSMArena.com
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