The transition to GAA architecture marks a significant shift from FinFET designs, potentially enhancing performance and power efficiency, but also complicating the manufacturing process.
Combining GAA technology with backside power delivery networks promises better electrostatic control, but requires TSMC to manage manufacturing challenges at an even greater scale.
While TSMC aims for mass production of the 2nm node in 2025, uncertainty regarding the realistic timeline and execution remains amidst geopolitical and technical hurdles.
The introduction of backside power delivery networks alongside the GAA technology presents TSMC with a complex engineering challenge that may narrow the margin for errors.
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